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| UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching NPN SILICON TRANSISTOR 1 SOT-89 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD1616-X-AB3-R 2SD1616L-x-AB3-R 2SD1616-x-G03-K 2SD1616L-x-G03-K 2SD1616-x-T92-B 2SD1616L-x-T92-B 2SD1616-x-T92-K 2SD1616L-x-T92-K 2SD1616-x-T9S-K 2SD1616L-x-T9S-K 2SD1616A-x-AB3-R 2SD1616AL-x-AB3-R 2SD1616A-x-G03-K 2SD1616AL-x-G03-K 2SD1616A-x-T92-B 2SD1616AL-x-T92-B 2SD1616A-x-T92-K 2SD1616AL-x-T92-K 2SD1616A-x-T9S-K 2SD1616AL-x-T9S-K Package SOT-89 SIP-3 TO-92 TO-92 TO-92SP SOT-89 SIP-3 TO-92 TO-92 TO-92SP Pin Assignment 1 2 3 B C E E C B E C B E C B E C B B C E E C B E C B E C B E C B Packing Tape Reel Bulk Tape Box Bulk Bulk Tape Reel Bulk Tape Box Bulk Bulk 2SD1616L-x-AB3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) AB3: SOT-89, G03: SIP-3, T92: TO-92, T 9S: TO-92S (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-008,C 2SD1616/A ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL 2SD1616 2SD1616A 2SD1616 2SD1616A NPN SILICON TRANSISTOR RATINGS UNIT 60 Collector to Base Voltage VCBO V 120 50 Collector to Emitter Voltage VCEO V 60 Emitter to Base Voltage VEBO 6 V DC IC 1 A Collector Current 2 A Pulse(Note2) ICM Total Power Dissipation PC 750 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width10ms, Duty cycle<50% ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Transition Frequency Output Capacitance Turn On Time Storage Time Fall Time SYMBOL VCE (SAT) VBE (SAT) VBE (ON) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC=1A, IB=50mA IC=1A, IB=50mA VCE =2V, IC =50mA VCB=60V VEB= 6V 2SD1616 VCE =2V, IC =100mA 2SD1616A VCE =2V, IC=1A VCE =2V, IC =100mA VCB =10V, f =1MHz VCE =10V, IC =100mA IB1 = -IB2 =10mA VBE(OFF) = -2 ~ -3V MIN TYP 0.15 0.9 640 MAX UNIT 0.3 V 1.2 V 700 mV 100 nA 100 nA 600 400 MHz pF s s s 600 135 135 81 100 160 19 0.07 0.95 0.07 CLASSIFICATION OF hFE1 RANK hFE1 Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-008,C 2SD1616/A TYPICAL CHARACTERISTICS Collector Output Capacitance 1000 500 300 Capacitance, C ob (pF) Current Gain-Bandwidth Product, fT (MHz) NPN SILICON TRANSISTOR Current Gain-Bandwidth Product 1000 VCE=2V 500 300 100 50 30 10 5 3 1 0.01 0.03 0.1 0.3 1 35 10 Collector Current, IC (A) IE=0 f=1.0MHz 100 50 30 10 5 3 1 3 5 10 30 50 100 300 Collector-Base Voltage, VCB (V) Static Characteristic 100 I B=300 A I B=250 A Collector Current, IC (A) Static Characteristic 4. 0m A 10 I B=5.0mA mA IB= 4 .5 IB =3.5mA IB=3.0mA IB=2.5mA I B=2.0mA IB=1.5mA IB=1.0mA Collector Current , IC (mA) 80 0.8 60 I B=200 A 0.6 I B=150 A 40 I B=100 A 20 I B=50 A 0.4 0.2 IB=0.5mA 0 2 4 6 8 10 0 0.2 IB = 0.4 0.6 0.8 10 Collector-Emitter Voltage , VCE (V) Collector-Emitter Voltage, VCE (V) Switching Time 10 5 3 Time, tON, tSTG, tF ( s) VCC=10V IC=10xIB1= -10xIB2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.001 0.003 t STG tF tON 0.01 0.030.05 0.1 Collector Current, IC (A) 0.30.5 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-008,C 2SD1616/A TYPICAL CHARACTERISTICS(Cont.) DC Current Gain 1000 500 300 DC Current Gain, hFE Saturation Voltage, VCE (SAT), VBE (SAT), (V) NPN SILICON TRANSISTOR Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VCE=2V 10 5 3 1 0.5 0.3 0.1 0.05 0.03 VCE (SAT) VBE (SAT) IC=20IB 100 50 30 10 5 3 1 0.01 0.03 0.05 0.1 0.3 0.5 1 35 10 0.01 0.030.05 0.1 0.3 0.5 1 35 10 Collector Current, IC (A) Collector Current, IC (A) Safe Operating Area 10 5 3 0.8 Power Derating Collector Current, IC (A) 1 0.5 0.3 0.1 0.05 0.03 0.01 1 3 5 D C 20 0m s Power Dissipation, PD (W) pw=1ms 10ms 0.6 0.4 2SD1616A 2SD1616 0.2 10 30 50 100 300 0 25 50 75 100 125 150 175 200 ) Collector-Emitter Voltage, VCE (V) Ambient Temperature, Ta ( U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-008,C |
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